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Infineon Technologies FF200R12KT4 módulo IGBT - Usado
Descricao
Módulo IGBT industrial usado Infineon Technologies FF200R12KT4.
Especificacoes
| Brand | Infineon Technologies |
|---|---|
| Model | FF200R12KT4 |
| Collector-emitter cut-off current | 5.0 mA |
| Collector-emitter saturation voltage | 1.75-2.15 V |
| Collector-emitter voltage | 1200 V |
| Continuous DC collector current | 200 A |
| Gate threshold voltage | 5.2-6.4 V |
| Gate-emitter leakage current | 400 nA |
| Gate-emitter peak voltage | +/-20 V |
| Isolation test voltage | 4.0 kV |
| Repetitive peak collector current | 400 A |
| Weight | 340 g |
| Storage temperature | -40 to 125 °C |
| Operating junction temperature | -40 to 150 °C |
| Clearance terminal to heatsink | 23.0 mm |
| Clearance terminal to terminal | 11.0 mm |
| Comparative tracking index | >400 |
| Continuous DC forward current diode | 200 A |
| Creepage distance terminal to heatsink | 29.0 mm |
| Creepage distance terminal to terminal | 23.0 mm |
| Fall time | 0.10-0.16 µs |
| Forward voltage diode | 1.65-2.15 V |
| Gate charge | 1.80 µC |
| Input capacitance | 14.0 nF |
| Internal gate resistor | 3.8 Ω |
| Internal isolation | Al2O3 |
| Module baseplate material | Cu |
| Module lead resistance | 0.70 mΩ |
| Mounting torque for module mounting | 3.00 - 6.00 Nm |
| Repetitive peak reverse voltage diode | 1200 V |
| Reverse transfer capacitance | 0.50 nF |
| Rise time | 0.04-0.50 µs |
| Stray inductance module | 20 nH |
| Terminal connection torque | 2.5 - 5.0 Nm |
| Thermal resistance case to heatsink per IGBT | 0.034 K/W |
| Thermal resistance case to heatsink per module | 0.01 K/W |
| Thermal resistance junction to case per IGBT | 0.135 K/W |
| Total power dissipation | 1100 W |
| Turn-off delay time | 0.45-0.54 µs |
| Turn-off energy loss per pulse | 14.0-23.0 mJ |
| Turn-on delay time | 0.16-0.18 µs |
| Turn-on energy loss per pulse | 10.0-17.0 mJ |
Documentos
FF200R12KT4 (english/german)
Ficha tecnica
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