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Infineon Technologies FF300R12KT4 - D'occasion
Description
Module IGBT Infineon Technologies FF300R12KT4 d'occasion.
Specifications
| Brand | Infineon Technologies |
|---|---|
| Model | FF300R12KT4 |
| Collector-emitter saturation voltage | 1.75 V |
| Collector-emitter voltage | 1200 V |
| Continuous DC collector current | 300 A |
| Gate threshold voltage | 5.8 V |
| Gate-emitter peak voltage | +/-20 V |
| Weight | 340 g |
| Storage temperature | -40 ... 125 °C |
| Fall time | 0.10 µs |
| Gate charge | 2.40 µC |
| Input capacitance | 19.0 nF |
| Internal gate resistor | 2.5 Ω |
| Module lead resistance, terminals - chip | 0.70 mΩ |
| Reverse transfer capacitance | 0.81 nF |
| Rise time | 0.04 µs |
| Stray inductance module | 20 nH |
| Thermal resistance, case to heatsink per module | 0.01 K/W |
| Thermal resistance, junction to case per IGBT | 0.093 K/W |
| Total power dissipation | 1600 W |
| Turn-off delay time | 0.45 µs |
| Turn-off energy loss per pulse | 19.5 mJ |
| Turn-on delay time | 0.17 µs |
| Turn-on energy loss per pulse | 16.5 mJ |
Documents
FF300R12KT4 (english/german)
Fiche technique
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